PMOS diode-biased cascoded current mirror: Difference between revisions

From ICclopedia
Content added Content deleted
Line 40: Line 40:


== Monte Carlo Analysis ==
== Monte Carlo Analysis ==

In our Montecarlo analysis, we are measuring the effect of transistors’ mismatch on the performance of our current mirror i.e. how small variations in individual transistor parameters when added together can affect the performance of the overall circuit (please refer to the NMOS counterpart article for additional setup details for this simulation).


[[File:PMOS_diode-biased_cascoded_current_mirror_mc_analysis.svg|800px]]
[[File:PMOS_diode-biased_cascoded_current_mirror_mc_analysis.svg|800px]]

Revision as of 00:34, 21 November 2022

Schematic Diagram

SPICE Simulations

Operating Point Analysis

Operating point DC measurement results (re-formatted for display)

n1 = 0.773
n2 = 0.650
n3 = 0.280
n4 = 0.777
n5 = 0.427
vp = 1.3
v1#branch = I1 + I2 = (-50) + (-50) 
v1#branch = -100uA
v2#branch = -49.996 uA
(v2#branch/50uA) = 0.9992

And our relevant transistors' device parameters at the DC OP (re-formatted for display):

device  m5          m4         m3         m2          m1                                 
model   pmos        pmos       pmos       pmos        pmos                               
gm      120.844 uS  819.692 uS 775.238    445.312 uS  445.348 uS                         
gds     1.533 MR    169.36 kR  14.588 kR  885.61 kR   892.41 kR                          
id      50 uA       50 uA      49.996 uA  49.996 uA   50 uA                              
vgs     1.0199 V    0.492 V    0.496 V    0.527 V     0.527 V                            
vds     1.0199 V    0.346 V    0.127 V    0.523 V     0.527 V                            
vth     0.337  V    0.439 V    0.439 V    0.337 V     0.337 V                            
vdsat   0.601  V    0.108 V    0.110 V    0.198 V     0.198 V

DC Analysis (Sweep)

For measuring the variation of the mirrored output current under different applied loads. We apply a DC sweep to V2 (our load voltage) from 1.3V to 0V in 0.05V increments.

We are plotting the output current magnitude vs drain voltage.

Monte Carlo Analysis

In our Montecarlo analysis, we are measuring the effect of transistors’ mismatch on the performance of our current mirror i.e. how small variations in individual transistor parameters when added together can affect the performance of the overall circuit (please refer to the NMOS counterpart article for additional setup details for this simulation).

Results

Figures of Merit

Output Resistance Rout:

Compliance Voltage Vmin:

References

Toolchain